GT30J65MRB,S1E
Part Number:
GT30J65MRB,S1E
Product Classification:
Single IGBTs
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
650V SILICON N-CHANNEL IGBT, TO-
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Power - Max 200 W
- Package / Case TO-3P-3, SC-65-3
- Input Type Standard
- Operating Temperature 175°C (TJ)
- Reverse Recovery Time (trr) 200 ns
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Current - Collector (Ic) (Max) 60 A
- Gate Charge 70 nC
- Supplier Device Package TO-3P(N)
- Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
- Switching Energy 1.4mJ (on), 220µJ (off)
- Td (on/off) @ 25°C 75ns/400ns
- Test Condition 400V, 15A, 56Ohm, 15V