GT50JR22(STA1,E,S)

GT50JR22(STA1,E,S)

Part Number: GT50JR22(STA1,E,S)
Product Classification: Single IGBTs
Manufacturer: Toshiba Electronic Devices and Storage Corporation
Description: PB-F IGBT / TRANSISTOR TO-3PN(OS
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Current - Collector (Ic) (Max) 50 A
  • Voltage - Collector Emitter Breakdown (Max) 600 V
  • Package / Case TO-3P-3, SC-65-3
  • Input Type Standard
  • Operating Temperature 175°C (TJ)
  • Current - Collector Pulsed (Icm) 100 A
  • Supplier Device Package TO-3P(N)
  • Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
  • Power - Max 230 W