GT50N322A
Part Number:
GT50N322A
Product Classification:
Single IGBTs
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
IGBT 1000V 50A TO3P
Packaging:
Tray
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Current - Collector (Ic) (Max) 50 A
- Package / Case TO-3P-3, SC-65-3
- Input Type Standard
- Supplier Device Package TO-3P(N)
- Current - Collector Pulsed (Icm) 120 A
- Reverse Recovery Time (trr) 800 ns
- Voltage - Collector Emitter Breakdown (Max) 1000 V
- Power - Max 156 W
- Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A